| PART |
Description |
Maker |
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| 1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA
0TC Reference Voltage Zener
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MPXV2010DP MPXV2010GP MPX2010 MPX2010D MPX2010DP M |
Compensated Pressure Sensor
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| CPT-8-2013 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| CMT-18-6007 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CMT-8-2003 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| 6662 6661 6663 6664 |
Temperature Compensated Crystal
|
Vectron International, Inc
|
| CMT-4-0504 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| MPXV4006G |
MPXV4006G Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|
